Samsung Electronics, world’s largest semiconductor manufacturer (according to SIA) just won the race to 10 nanometer (10nm-class) process by launching DDR4 SDRAM memory chips which utilize the new process node. However, this ’10nm-class’ is not exactly precise 10nm, as the distance between the cells / transistors can vary between 10-19nm. If you’re in the semiconductor industry, this will not be surprising as Intel’s famous 22nm process was considered 26-28nm process. The new DDR4 memory chips come in 8Gbit (1GB) capacity, supporting the frequency of up to 3.2 GHz (1.6 GHz in DDR mode). At the same time, power consumption is reduced by 10% when compared to
2016 will be marked with the arrival of two memory standards, which should spread across the mainstream and high-end / enthusiast line-up like fire. First, we have the HBM2, an improved version of HBM memory which debuted (and so far, only ships inside) with AMD R9 Fury family of cards. HBM2 promises a four times increase in capacity and double the memory bandwith – meaning a single card can go from 4GB and 512GB/s to 16GB and 1TB/s. Given the low volume of HBM and HBM2 memory, those two will probably remain only on enthusiast graphics cards, such as recently renamed Greenland, high-end Polaris graphics processor from AMD
Qualcomm has today announced their newest and latest Category 10 LTE-Advanced modem, the 20nm Qualcomm Gobi MDM9x45 capable of speeds up to 450 Mbps/100 Mbps
AMD and Microsoft have shrunk the Xbox One’s main processor in an effort to maximize efficiency and costs.
New lineup of DDR4 memory to be targeted at Enterprise market.
As Samsung seems to complete its move to a 20nm manufacturing process, TSMC is aiming to shift to a 10 nm process node by the end of 2015.
Samsung and Globalfoundries have announced a partnership to collaborate on a global scale to deliver 14nm FinFET technology to their customers. This partnership is different from the already existing Common Platform Alliance which includes Globalfoundries, Samsung and IBM, but is likely a product of that relationship considering that IBM is mostly a research fab and doesn’t really produce many commercial wafers. This 14nm FinFET collaboration is an effort by both companies to build up enough fab capacity in order to satisfy the demand of their customers on this leading-edge technology. As you can see from the slide above Samsung and Globalfoundries’ partnership means that the
Back in 2003, AMD introduced the Opteron processor, world’s first 64-bit x86 processor capable of addressing more than 4GB of memory (32-bit) – no less than massive 1TB of memory, courtesy of its 40-bit allocation table. Processors of today are capable of addressing up to 8TB of SDRAM memory thanks to extended (46-bit) allocation table. However, until now, finding a high-capacity memory module with 32GB density was as rare as finding hen’s teeth and usually you would pay top dollar for it. Upcoming 20nm manufacturing process enabled the creation of ultra-dense memory modules and with SK.Hynix launching its 20nm 8Gbit memory chip, there was no
Qualcomm has been fairly quiet about their high-end ambitions after what is expected to follow the soon-to-launch Snapdragon 805 chipset. The Snapdragon 805 is Qualcomm’s chip that will likely ship in devices next quarter and is marketed by Qualcomm as their 4K chip with the Adreno 420 GPU. Now, even though the Snapdragon 805 (APQ8084) is a very powerful chip, it lacks 64-bit capability and doesn’t have an integrated modem, requiring a separate modem like Qualcomm’s 20nm MDM9x35 to enable cellular capability. It also sports an improved Krait CPU with a Krait 450 CPU compared to the Snapdragon 801 and 800’s Krait 400. However, it