Samsung Electronics, world’s largest semiconductor manufacturer (according to SIA) just won the race to 10 nanometer (10nm-class) process by launching DDR4 SDRAM memory chips which utilize the new process node. However, this ’10nm-class’ is not exactly precise 10nm, as the distance between the cells / transistors can vary between 10-19nm. If you’re in the semiconductor industry, this will not be surprising as Intel’s famous 22nm process was considered 26-28nm process. The new DDR4 memory chips come in 8Gbit (1GB) capacity, supporting the frequency of up to 3.2 GHz (1.6 GHz in DDR mode). At the same time, power consumption is reduced by 10% when compared to
Gartner predicted that the growth of global sales for DRAM in 2015 will be moderate
The old Federal Reserve Building at 301 Battery Street in San Francisco was the venue selected by Samsung to introduce their R&D foray into Silicon Valley on Wednesday evening. The usual “We are Samsung, we are the world” presentation proved that Samsung has turned into the 800 Pound Gorilla of the semiconductor industry. The company is investing a good deal of money in the San Jose R&D complex on Tasman Drive, San Jose which they’ll be moving into next summer upon its completion. The inclusion of this information in each of the presenters foil set indicates the center looms large in the companies thought processes.