Samsung Semiconductor is on a roll of late. The company introduced FinFET transistors with the 14nm process last year for logic, beating Intel for the first time in history to to a new manufacturing node. 14nm process expanded from in-house Exynos SoC processors to customers such as Apple, Qualcomm and others, while Intel was trying to get Broadwell architecture out the door. This process was followed by the announcement of ultra-dense 15nm NAND Flash memory, and now the company announced mass-production of next-gen memory standard – HBM2. The company announced that it started mass production of High-Bandwidth Memory 2 chips using its 20nm process, which just got
The old Federal Reserve Building at 301 Battery Street in San Francisco was the venue selected by Samsung to introduce their R&D foray into Silicon Valley on Wednesday evening. The usual “We are Samsung, we are the world” presentation proved that Samsung has turned into the 800 Pound Gorilla of the semiconductor industry. The company is investing a good deal of money in the San Jose R&D complex on Tasman Drive, San Jose which they’ll be moving into next summer upon its completion. The inclusion of this information in each of the presenters foil set indicates the center looms large in the companies thought processes.
Samsung and Globalfoundries have announced a partnership to collaborate on a global scale to deliver 14nm FinFET technology to their customers. This partnership is different from the already existing Common Platform Alliance which includes Globalfoundries, Samsung and IBM, but is likely a product of that relationship considering that IBM is mostly a research fab and doesn’t really produce many commercial wafers. This 14nm FinFET collaboration is an effort by both companies to build up enough fab capacity in order to satisfy the demand of their customers on this leading-edge technology. As you can see from the slide above Samsung and Globalfoundries’ partnership means that the