Global Politics, US

Samsung Begins Mass Production of 20nm DDR4 Memory

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Samsung (KRX: 005930) announced Tuesday that it has begun production of DDR4 memory on the 20 nanometer process node, targeting Enterprise users.

“Our new 20nm 8Gb DDR4 DRAM more than meets the high performance, high density and energy efficiency needs that are driving the proliferation of next-generation enterprise servers,” said Jeeho Baek, Vice President of Memory Marketing at Samsung Electronics, in a statement. “By expanding the production of our 20nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market.”

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The DDR4 DIMMs have a voltage of 1.2V and a data transfer rate per pin that maxes out at 2,400 Mbps. Samsung said that using the 20nm process node as well as 3D through silicon via (3D TSV) technology means that these 32 GB DIMMs are only a stepping stone, and the company is targeting 128 GB modules in the future.

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